Strain engineered segregation regimes for the fabrication of thin Si1-xGex layers with abrupt n-type doping

被引：9

作者：

Berbezier, I. ^{[1
]}

Ayoub, J. P. ^{[1
]}

Ronda, A. ^{[1
]}

Oehme, M. ^{[2
]}

Lyutovich, K. ^{[2
]}

Kasper, E. ^{[2
]}

Di Marino, M. ^{[3
,4
]}

Bisognin, G. ^{[3
,4
]}

Napolitani, E. ^{[3
,4
]}

Berti, M. ^{[3
,4
]}

机构：

[1] CNRS, F-13397 Marseille 20, France

[2] Inst Halbleitertech, D-70569 Stuttgart, Germany

[3] Univ Padua, Dipartimento Fis, I-35131 Padua, Italy

[4] Univ Padua, MATIS CNR INFM, I-35131 Padua, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 03期

关键词：

antimony; doping profiles; Ge-Si alloys; high electron mobility transistors; segregation; semiconductor doping; semiconductor growth; semiconductor thin films; surface energy; MOLECULAR-BEAM EPITAXY; SB SURFACE SEGREGATION; SI MBE; DIFFUSION; SILICON; GROWTH; TEMPERATURE; PROFILES; MODFETS;

D O I：

10.1063/1.3279597

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We implement a low temperature (LT) growth technique for achieving abrupt n-type doping profiles in order to match the vertical scaling of modulation doped field effect transistor fully depleted structures. We use strain engineering of Ge rich Si1-xGex layers at LTs to suppress dopant segregation and to fully incorporate antimony in ultrathin Si1-xGex layers. We show that, only in the LT terrace-mediated kinetically limited regime, segregation is controlled by strain. At higher temperatures, in the step-edge mediated kinetically limited regime, segregation becomes independent of strain and at even higher temperatures, segregation follows the classical equilibrium behaviour mainly controlled by reduction of surface energy and not by strain.

引用

页数：5

共 31 条

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