High-Aspect-Ratio Imageable Top-Surface Lithography Using UV-Assisted Inkless Contact Printing

被引:10
作者
Choi, Se-Jin [1 ]
Park, Jeong-Yong [2 ]
机构
[1] Minuta Tech Co Ltd, R&D Ctr, Songnam 51315, Gyeonggi Do, South Korea
[2] Samsung Elect Corp, Semicond Div, Yougin 446711, Gyeonggi Do, South Korea
关键词
contact printing; nanopatterning; radical reactions; reactive ion etching; rigiflex molds; DECAL-TRANSFER LITHOGRAPHY; SELF-ASSEMBLED MONOLAYERS; SOFT LITHOGRAPHY; POLYMERS; RESISTS; GROWTH; SCALE; FILM; MOLD;
D O I
10.1002/smll.200902073
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
(Figure Presented) The simple production of micro/nanoscale patterns with very high aspect ratios exceeding that of the mold used is demonstrated using unconventional top-surface lithography. The method combines inkless contact printing and subsequent dry pattern development by oxygen reactive ion etching, making it possible to form high-resolution, high-aspect-ratio patterns without the aid of expensive optical protocols. © 2010 Wiley-VCH Verlag GmbH & Co. KGaA.
引用
收藏
页码:371 / 375
页数:5
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