Impact of Nitrogen, Boron and Phosphorus Impurities on the Electronic Structure of Diamond Probed by X-ray Spectroscopies

被引:5
作者
Choudhury, Sneha [1 ,2 ]
Golnak, Ronny [1 ]
Schulz, Christian [1 ]
Lieutenant, Klaus [1 ]
Tranchant, Nicolas [3 ]
Arnault, Jean-Charles [3 ,6 ]
Pinault-Thaury, Marie-Amandine [4 ]
Jomard, Francois [4 ]
Knittel, Peter [5 ]
Petit, Tristan [1 ]
机构
[1] Helmholtz Zentrum Berlin Mat & Energie GmbH, Albert Einstein Str 15, D-12489 Berlin, Germany
[2] Free Univ Berlin, Dept Chem, Arnimallee 14, D-14195 Berlin, Germany
[3] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France
[4] Univ Paris Saclay, GEMaC, CNRS, UVSQ, F-78000 Versailles, France
[5] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
[6] Univ Paris Saclay, UMR CEA CNRS 3685, NIMBE, F-91191 Gif Sur Yvette, France
来源
C-JOURNAL OF CARBON RESEARCH | 2021年 / 7卷 / 01期
基金
欧盟地平线“2020”;
关键词
diamond; XAS; XES; XPS; doping; defects; electronic structure;
D O I
10.3390/c7010028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Doping diamond with boron, nitrogen or phosphorus enables a fine tuning of its electronic properties, which is particularly relevant for applications involving electron emission. However, the chemical nature of the doping sites and its correlation with electron emission properties remain to be clarified. In this work, we applied soft X-ray spectroscopy techniques to probe occupied and unoccupied electronic states in undoped, boron-, phosphorus- and nitrogen-containing single crystal diamonds. X-ray absorption, X-ray emission and X-ray photoemission spectroscopies, performed at the carbon K-edge, provide a full picture of new electronic states created by impurities in diamond. The different probing depths of fluorescence- and electron-based detection techniques enable a comparison between surface and bulk contributions.
引用
收藏
页数:10
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