Characteristics of n-GaN after ICP etching

被引：1
|
作者：
Han, YJ [1 ]
Xue, S [1 ]
Guo, WP [1 ]
Hao, ZB [1 ]
Sun, CZ [1 ]
Luo, Y [1 ]
机构：
[1] Tsing Hua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Beijing 100084, Peoples R China
来源：
MATERIALS, DEVICES, AND SYSTEMS FOR DISPLAY AND LIGHTING | 2002年 / 4918卷
关键词：
ICP; n-GaN; I-V characteristics; PL;
D O I：
10.1117/12.483055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, a systematic study on the plasma-induced damage on n-type GaN by inductively coupled plasma (ICP) etching is presented. After n-contact metal formation and annealing, electrical property is evaluated by the IN characteristics. Room temperature photoluminescence (PL) measurement of etched GaN surfaces is performed to investigate the etching damage on the optical properties of n-type GaN. Investigation of the effect of additive gas (N-2, Ar), RF chuck power on these characteristics has also been carried out. The better etching conditions have been obtained based on these results.
引用
收藏
页码：193 / 196
页数：4
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