Optimal radii of photonic crystal holes within DBR mirrors in long wavelength VCSEL

被引:21
作者
Czyszanowski, Tomasz
Dems, Maciej
Thienpont, Hugo
Panajotov, Krassimir
机构
[1] Vrije Univ Brussel, Dept Appl Phys & Photon, B-1050 Brussels, Belgium
[2] Tech Univ Lodz, Inst Phys, PL-93005 Lodz, Poland
[3] Inst Solid State Phys, BU-1784 Sofia, Bulgaria
关键词
D O I
10.1364/OE.15.001301
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The modal characteristics of a Photonic-Crystal Vertical-Cavity Surface-Emitting diode Laser (PC-VCSEL) have been investigated. Photonic crystal structure, realized by a regular net of air holes within the layers, has been etched in the upper DBR mirror. An advanced three-dimensional, vectorial electromagnetic model has been applied to a phosphide-based device design featuring InGaAlAs active region, AlGaAs/GaAs mirrors and a tunnel junction to confine the current flow. For the structure under consideration a single mode operation has been found for the hole diameter over photonic crystal lattice constant ratio between 0.1 - 0.3. (c) 2007 Optical Society of America.
引用
收藏
页码:1301 / 1306
页数:6
相关论文
共 9 条
[1]   Efficient CW lasing and high-speed modulation of 1.3-μm AlGaInAsVCSELs with good high temperature lasing performance [J].
Cheng, J ;
Shieh, CL ;
Huang, XD ;
Liu, GL ;
Murty, MVR ;
Lin, CC ;
Xu, DX .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (01) :7-9
[2]   Usability limits of the scalar effective frequency method used to determine modes distributions in oxide-confined vertical-cavity surface-emitting diode lasers [J].
Czyszanowski, T ;
Nakwaski, W .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2006, 39 (01) :30-35
[3]  
CZYSZANOWSKI T, UNPUB J OPT SOC AM B
[4]   Plane Wave Admittance Method - a novel approach for determining the electromagnetic modes in photonic structures [J].
Dems, M ;
Kotynski, R ;
Panajotov, K .
OPTICS EXPRESS, 2005, 13 (09) :3196-3207
[5]   Theoretical study of cold-cavity single-mode conditions in vertical-cavity surface-emitting lasers with incorporated two-dimensional photonic crystals [J].
Ivanov, PS ;
Unold, HJ ;
Michalzik, R ;
Maehnss, J ;
Ebeling, KJ ;
Sukhoivanov, IA .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2003, 20 (12) :2442-2447
[6]   Polarization-insensitive quantum-well semiconductor optical amplifiers [J].
Koonath, P ;
Kim, S ;
Cho, WJ ;
Gopinath, A .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) :1282-1290
[7]   Simulation of performance characteristics of GaInNAs vertical-cavity surface-emitting lasers [J].
Sarzala, RP ;
Makowiak, P ;
Wasiak, M ;
Czyszanowski, T ;
Nakwaski, W .
IEE PROCEEDINGS-OPTOELECTRONICS, 2003, 150 (01) :83-85
[8]   Low-threshold operation of 1.34-μm GaInNAsVCSEL grown by MOVPE [J].
Yamada, M ;
Anan, T ;
Hatakeyama, H ;
Tokutome, K ;
Suzuki, N ;
Nakamura, T ;
Nishi, K .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2005, 17 (05) :950-952
[9]   Etching depth dependence of the effective refractive index in two-dimensional photonic-crystal-patterned vertical-cavity surface-emitting laser structures [J].
Yokouchi, N ;
Danner, AJ ;
Choquette, KD .
APPLIED PHYSICS LETTERS, 2003, 82 (09) :1344-1346