Ultrathin chromium oxide films on the W(100) surface
被引:13
作者:
Guo, DH
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Guo, DH
Guo, QL
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R ChinaChinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Guo, QL
[1
]
Altman, MS
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Altman, MS
Wang, EG
论文数: 0引用数: 0
h-index: 0
机构:Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
Wang, EG
机构:
[1] Chinese Acad Sci, Inst Phys, State Key Lab Surface Phys, Beijing 100080, Peoples R China
[2] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong, Peoples R China
Ultrathin chromium oxide films were prepared on a W(100) surface under ultrahigh-vacuum conditions and investigated in situ by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and low-energy electron diffraction. The results show that, at Cr coverage of less than 1 monolayer, CrO2 is formed by oxidizing pre-deposited Cr at 300-320 K in similar to 10(-7) mbar oxygen. However, an increase of temperature causes formation of Cr2O3. At Cr coverage above I monolayer, only Cr2O3 is detected.