Nonlocal and local mechanisms of cesium-induced chemisorption of oxygen on a p-GaAs(Cs, O) surface

被引：2

作者：

Bakin, V. V. ^{[1
]}

Toropetsky, K. V. ^{[1
]}

Scheibler, H. E. ^{[1
]}

Terekhov, A. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

JETP LETTERS | 2015年 / 101卷 / 06期

基金：

俄罗斯基础研究基金会;

关键词：

PROMOTED OXIDATION; SEMICONDUCTORS; PHOTOCATHODES; ADSORPTION; ENERGY; GAAS; CS;

D O I：

10.1134/S002136401506003X

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It has been established that the probability of Cs-induced chemisorption of molecular oxygen on a p-GaAs(Cs) surface is mainly determined by the probability of the dissociation of the molecule during its collision with the surface. With an increase in the amount of adsorbed oxygen on the p-GaAs(Cs, O) surface, the probability of its chemisorption decreases and, depending on the value of the cesium coating, can either be still determined by the probability of the dissociation of the molecule or be limited by the probability of the "capture" of oxygen atoms by the local chemisorption centers or depend on these two processes.

引用

页码：380 / 384

页数：5

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