Photoluminescence kinetics of indirect excitons in GaAs/AlxGa1-xAs coupled quantum wells

被引：82

作者：

Butov, LV ^{[1
]}

Imamoglu, A

Mintsev, AV

Campman, KL

Gossard, AC

机构：

[1] Russian Acad Sci, Inst Solid State Phys, Moscow 142432, Russia

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 1999年 / 59卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.59.1625

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) kinetics of long-lifetime indirect excitons in a GaAs/AlxGa1-xAs coupled quantum well characterized by a small in-plane random potential was studied at temperatures 1.5 less than or equal to T less than or equal to 15 K for a wide range of exciton densities. Strong deviations of the indirect exciton PL kinetics from monoexponential PL rise/decay were observed at low temperatures and high exciton densities. In particular, right after the excitation is switched off, the spectrally integrated indirect exciton PL intensity increased sharply. Simultaneously, the indirect exciton energy distribution was observed to narrow significantly. The observed increase in intensity is attributed to the sharp increase of occupation of the optically active exciton states. The energy distribution narrowing is explained in terms of the phonon mediated exciton energy relaxation in momentum space and in the in-plane random potential. [S0163-1829(99)00104-6].

引用

页码：1625 / 1628

页数：4

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