Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices

被引：0
|
作者：
Ker, MD [1 ]
Chen, JH [1 ]
Hsu, KC [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Nanoelect & Gigascale Syst Lab, Hsinchu 30039, Taiwan
来源：
2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel self-substrate-triggered (SST) technique is proposed to solve the non-uniform turn-on issue of the multi-finger GGNMOS for ESD protection. The first turned-on center finger is used to trigger on all fingers in the GGNMOS structure with self-substrate-triggered technique. So, the turn-on uniformity and ESD robustness of GGNMOS can be greatly improved by the new proposed self-substrate-triggered technique.
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页码：17 / 18
页数：2
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