Low temperature photoluminescence of GaAs/GaInP heterostructures measured under hydrostatic pressure

A study of 11 K photoluminescence measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells is reported for the first time at pressures up to similar to 5 GPa. The use of low temperature allows us to study the true nature of a peak at similar to 1.46 eV, which dominates instead of the GaAs QW emission, even at very low excitation intensities to pressures well above the Gamma-X crossover in GaInP. Our results suggest that the similar to 1.46 eV emission is a spatially indirect transition of electrons and holes separated at the interface in a type II band alignment.