Low temperature photoluminescence of GaAs/GaInP heterostructures measured under hydrostatic pressure

被引：0

作者：

Kobayashi, T ^{[1
]}

Nagata, A ^{[1
]}

Prins, AD ^{[1
]}

Homma, Y ^{[1
]}

Uchida, K ^{[1
]}

Nakahara, J ^{[1
]}

机构：

[1] Kobe Univ, Dept Elect & Elect Engn, Kobe, Hyogo 6578501, Japan

来源：

Physics of Semiconductors, Pts A and B | 2005年 / 772卷

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study of 11 K photoluminescence measurements of metalorganic vapor phase epitaxy grown GaAs/GaInP quantum wells is reported for the first time at pressures up to similar to 5 GPa. The use of low temperature allows us to study the true nature of a peak at similar to 1.46 eV, which dominates instead of the GaAs QW emission, even at very low excitation intensities to pressures well above the Gamma-X crossover in GaInP. Our results suggest that the similar to 1.46 eV emission is a spatially indirect transition of electrons and holes separated at the interface in a type II band alignment.

引用

页码：931 / 932

页数：2

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