Rugged metal electrode (RME) for high density memory devices

被引：6

作者：

Joo, JH ^{[1
]}

Kim, WD ^{[1
]}

Jeong, YK ^{[1
]}

Won, SJ ^{[1
]}

Park, SY ^{[1
]}

Yoo, CY ^{[1
]}

Kim, ST ^{[1
]}

Moon, JT ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Semicond R&D Div, Proc Dev Team, Youngin City 449900, Kyouggi Do, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2001年 / 40卷 / 8A期

关键词：

rugged films; ruthenium; capacitor; capacitance; reduction; DRAM;

D O I：

10.1143/JJAP.40.L826

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Rugged metal electrode (RME) was suggested and evaluated as a bottom electrode of high-density memory, capacitors. Rugged ruthenium films (RME-Ru) were successfully fabricated through volume shrinking of ruthenium oxide films under reduction ambient (RuOx + H-2 = Ru + H2O). The effective surface area of RME-Ru films was significantly enlarged due to the formation of wrinkle on its surface, which resulted in low SiO2 equivalent thickness (Tox) as low as similar to 6 Angstrom with Ru/TaOx(110 Angstrom)/RME-Ru capacitor. It is believed that RME technique will be very useful to realize and extend MIM (Metal-Insulator-Metal) capacitor era in the mass production of high density memory devices.

引用

页码：L826 / L828

页数：3

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