Stability of the Bi2Se3(111) topological state: Electron-phonon and electron-defect scattering

被引:100
作者
Hatch, Richard C. [1 ]
Bianchi, Marco [1 ]
Guan, Dandan [1 ,2 ]
Bao, Shining [2 ]
Mi, Jianli [3 ]
Iversen, Bo Brummerstedt [3 ]
Nilsson, Louis [1 ]
Hornekaer, Liv [1 ]
Hofmann, Philip [1 ]
机构
[1] Aarhus Univ, Interdisciplinary Nanosci Ctr, Dept Phys & Astron, DK-8000 Aarhus C, Denmark
[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China
[3] Aarhus Univ, Interdisciplinary Nanosci Ctr, Dept Chem, Ctr Mat Crystallog, DK-8000 Aarhus C, Denmark
基金
新加坡国家研究基金会;
关键词
SURFACE; INSULATOR; BI2TE3;
D O I
10.1103/PhysRevB.83.241303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electron dynamics of the topological surface state on Bi2Se3(111) is investigated by temperature-dependent angle-resolved photoemission. The electron-phonon coupling strength is determined in a spectral region for which only intraband scattering involving the topological surface band is possible. The electron-phonon coupling constant is found to be lambda = 0.25(5), more than an order of magnitude higher than the corresponding value for intraband scattering in the noble-metal surface states. The stability of the topological state with respect to surface irregularities was also tested by introducing a small concentration of surface defects via ion bombardment. It is found that, in contrast to the bulk states, the topological state can no longer be observed in the photoemission spectra, and this cannot merely be attributed to surface defect-induced momentum broadening.
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页数:4
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