Development of high efficiency 255-355nm AlGaN-based light-emitting diodes

被引：107

作者：

Pernot, Cyril ^{[1
]}

Fukahori, Shinya ^{[1
]}

Inazu, Tetsuhiko ^{[1
]}

Fujita, Takehiko ^{[1
]}

Kim, Myunghee ^{[1
]}

Nagasawa, Yosuke ^{[1
]}

Hirano, Akira ^{[1
]}

Ippommatsu, Masamichi ^{[1
]}

Iwaya, Motoaki ^{[2
]}

Kamiyama, Satoshi ^{[2
,3
]}

Akasaki, Isamu ^{[2
]}

Amano, Hiroshi ^{[4
]}

机构：

[1] Meijo Univ, UV Craftory Co Ltd, Tempaku Ku, Nagoya, Aichi 4680073, Japan

[2] Meijo Univ, Fac Sci & Technol, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Nagoya Univ, Akasaki Inst 3F, EL SEED Corp, Chikusa Ku, Nagoya, Aichi 4648601, Japan

[4] Nagoya Univ, Akasaki Res Ctr, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2011年 / 208卷 / 07期

关键词：

AlGaN; AlN; EQE; ligth extraction; UV LED; UV DEVICES;

D O I：

10.1002/pssa.201001037

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the fabrication and characterization of high efficiency ultraviolet (UV) light emitting diodes (LEDs) with emission wavelength ranging from 255 to 355 nm. Epi-layers of UV LEDs were grown on AlGaN templates with sapphire substrates. Flip-chip configuration without removing sapphire is used for characterization of the UV LEDs. External quantum efficiencies (EQEs) over 3% were obtained for all the investigated wavelengths with maximum value reaching 5.1% for 280 nm LED. Under RT DC operation at a current of 500 mA, output powers of 38, 77, and 64 mW were measured for 257, 280, and 354 nm, respectively. By using enhanced light extraction technologies, such as, moth-eye structure on the back side of the sapphire substrate, we expect to improve these values by up to 50%. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1594 / 1596

页数：3

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