Thermal Annealing of Total Ionizing Dose Effect for Partially-Depleted SOI MOSFET

被引：3

作者：

Peng, Chao ^{[1
]}

Lei, Zhifeng ^{[1
]}

Zhang, Zhangang ^{[1
]}

He, Yujuan ^{[1
]}

Huang, Yun ^{[1
]}

En, Yunfei ^{[1
]}

机构：

[1] China Elect Prod Reliabil & Environm Testing Res, Sci & Technol Reliabil Phys & Applicat Elect Comp, Guangzhou 510610, Peoples R China

来源：

2020 20TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS 2020) | 2022年

基金：

中国国家自然科学基金;

关键词：

Annealing; radiation hardening; silicon on insulator; total ionizing dose; RADIATION; CHARGE; CHALLENGES;

D O I：

10.1109/RADECS50773.2020.9857715

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A radiation hardening process of shallow trench isolation oxide is proposed for 130 nm PDSOI technology. The TID effect and high temperature annealing effect after irradiation are investigated for the PDSOI nMOSFET.

引用

页码：1 / 5

页数：5

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