The effect of γ-rays irradiation on the electrical properties of WOx film-based memory cells

被引：3
作者：
Duan, Weijie
Wang, Jinbin [1 ]
Zhong, Xiangli
机构：
[1] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
来源：
EPL | 2017年 / 119卷 / 02期
基金：
中国国家自然科学基金;
关键词：
RADIATION; OPERATION; RRAM;
D O I：
10.1209/0295-5075/119/27003
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Resistive random access memory (RRAM) is recognized as a promising candidate for the next generation of non-volatile memory devices. In this work, the effect of.-rays irradiation on WOx-based RRAM devices is investigated. The basic device parameters including high resistance, low resistance, set voltage, and reset voltage show high uniformity with a total dose as high as 500 krad(Si). Furthermore, the retention of 10(4) s can be achieved after irradiation, and the static resistances are also tested and compared. The highly uniformity after.-rays irradiation provides the WOx-based RRAM devices with great potential for applications. Copyright (C) EPLA,
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页数：4
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共 26 条
  • [1] Resistive switching characteristics and mechanism of thermally grown WOx thin films
    Biju, Kuyyadi P.
    Liu, Xinjun
    Siddik, Manzar
    Kim, Seonghyun
    Shin, Jungho
    Kim, Insung
    Ignatiev, Alex
    Hwang, Hyunsang
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (06)
  • [2] Proton-based total-dose irradiation effects on Cu/HfO2:Cu/Pt ReRAM devices
    Butcher, Brian
    He, Xiaoli
    Huang, Mengbing
    Wang, Yan
    Liu, Qi
    Lv, Hangbing
    Liu, Ming
    Wang, Wei
    [J]. NANOTECHNOLOGY, 2010, 21 (47)
  • [3] Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism
    Chakrabarti, Somsubhra
    Ginnaram, Sreekanth
    Jana, Surajit
    Wu, Zong-Yi
    Singh, Kanishk
    Roy, Anisha
    Kumar, Pankaj
    Maikap, Siddheswar
    Qiu, Jian-Tai
    Cheng, Hsin-Ming
    Tsai, Ling-Na
    Chang, Ya-Ling
    Mahapatra, Rajat
    Yang, Jer-Ren
    [J]. SCIENTIFIC REPORTS, 2017, 7
  • [4] Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W Structure
    Chakrabarti, Somsubhra
    Samanta, Subhranu
    Maikap, Siddheswar
    Rahaman, Sheikh Ziaur
    Cheng, Hsin-Ming
    [J]. NANOSCALE RESEARCH LETTERS, 2016, 11
  • [5] Unipolar Switching Behaviors of RTO WOX RRAM
    Chien, W. C.
    Chen, Y. C.
    Lai, E. K.
    Yao, Y. D.
    Lin, P.
    Horng, S. F.
    Gong, J.
    Chou, T. H.
    Lin, H. M.
    Chang, M. N.
    Shih, Y. H.
    Hsieh, K. Y.
    Liu, R.
    Lu, Chih-Yuan
    [J]. IEEE ELECTRON DEVICE LETTERS, 2010, 31 (02) : 126 - 128
  • [6] Roles of silver oxide in the bipolar resistance switching devices with silver electrode
    Dong, C. Y.
    Shang, D. S.
    Shi, L.
    Sun, J. R.
    Shen, B. G.
    Zhuge, F.
    Li, R. W.
    Chen, W.
    [J]. APPLIED PHYSICS LETTERS, 2011, 98 (07)
  • [7] Switchable Cu2O/WOx p-n junction for high density crossbar arrays
    Duan, W. J.
    Wang, J. B.
    Zhong, X. L.
    Song, H. J.
    Li, B.
    [J]. RSC ADVANCES, 2016, 6 (104) : 102603 - 102607
  • [8] Total ionizing dose effect of γ-ray radiation on the switching characteristics and filament stability of HfOx resistive random access memory
    Fang, Runchen
    Velo, Yago Gonzalez
    Chen, Wenhao
    Holbert, Keith E.
    Kozicki, Michael N.
    Barnaby, Hugh
    Yu, Shimeng
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (18)
  • [9] Unified Physical Model of Bipolar Oxide-Based Resistive Switching Memory
    Gao, Bin
    Sun, Bing
    Zhang, Haowei
    Liu, Lifeng
    Liu, Xiaoyan
    Han, Ruqi
    Kang, Jinfeng
    Yu, Bin
    [J]. IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1326 - 1328
  • [10] Radiation Effects in Flash Memories
    Gerardin, S.
    Bagatin, M.
    Paccagnella, A.
    Gruermann, K.
    Gliem, F.
    Oldham, T. R.
    Irom, F.
    Nguyen, D. N.
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (03) : 1953 - 1969
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