Effects of growth temperatures on the structural and optoelectronic properties of sputtered zinc sulfide thin films for solar cell applications

被引：16
作者：
Haque, Faiazul [1 ,3 ]
Rahman, Kazi Sajedur [2 ]
Islam, Mohammad Aminul [2 ]
Yusoff, Yulisa [2 ]
Khan, Naveed Aziz [4 ]
Nasser, Ammar Ahmed [2 ]
Amin, Nowshad [2 ,3 ]
机构：
[1] Univ New South Wales, Sch Photovolta & Renewable Energy Engn, Sydney, NSW 2052, Australia
[2] Natl Energy Univ, Univ Tenaga Nas, Inst Sustainable Energy, Jalan IKRAM UNITEN, Kajang 43000, Selangor, Malaysia
[3] Natl Univ Malaysia, Fac Engn & Built Environm, INTEGRA, Bangi 43600, Selangor, Malaysia
[4] Univ Sydney, Sch Chem & Biomol Engn, Sydney, NSW 2006, Australia
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2019年 / 51卷 / 08期
关键词：
Zinc Sulfide; Sputtering; Substrate temperature; Buffer layer; Solar cell application; ZNS BUFFER LAYER; CU(IN; GA)SE-2; DEPOSITION; EFFICIENCY; QUALITY; OPTIMIZATION; FABRICATION;
D O I：
10.1007/s11082-019-1994-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The role of various substrate temperatures on the structural and optoelectronic properties of sputtered zinc sulfide (ZnS) thin films has been investigated in this work. The study of prepared film characterization has been done by XRD, AFM, UV-Vis spectrometry and Hall-effect measurement analysis. XRD patterns of the room temperature grown films reveal an amorphous nature, while the films deposited at 100 degrees C, 200 degrees C. 300 degrees C and 400 degrees C are found to be polycrystalline having the (111) preferential orientation. The optical bandgap values are found in the range of 3.18-3.61 eV depending on the substrate temperatures. The bulk and surface carrier densities are found in the order of 10(12) cm(-3) and 10(7) cm(-3), respectively. The growth temperatures are also observed to have a significant effect on the electrical characteristic of the deposited films.
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页数：13
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