In-Situ Cu(In,Ga)Se2 Composition Control by Optical Emission Spectroscopy During Hybrid Co-Sputtering/Evaporation Process

被引：0

作者：

Posada, Jorge ^{[1
]}

Jubault, Marie ^{[1
]}

Bousquet, Angelique ^{[2
]}

Tomasella, Eric ^{[2
]}

Lincot, Daniel ^{[1
]}

机构：

[1] EDF CNRS Chim ParisTech, IRDEP, UMR 7174, F-78401 Chatou, France

[2] Univ Blaise Pascal, Clermont Univ, ICCF, CNRS UMR 6296, F-63171 Aubiere, France

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

Cu(In; Ga)Se-2; hybrid process; Optical Emission; Spectroscopy; photovoltaics; plasma species; sputtering; target poisoning;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work, we have developed a hybrid one-step co-sputtering/evaporation Cu(In,Ga)Se-2 process, where Cu, In and Ga are sputtered simultaneously with the thermal evaporation of selenium, thus avoiding the use of H2Se. An appropriate control of the selenium flux is very important to prevent the target poisoning and hence some material flux variations. Indeed, the control of the CIGS composition must be rigorous to ensure reproducible solar cell properties. In this regard, a study of the correlations between plasma species, thin film composition and morphology has been performed by varying Se evaporation temperature in the 170 to 230 degrees C range.

引用

页码：413 / 416

页数：4

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