Highly-ordered and highly-stacked (150-layers) quantum dots

被引：13

作者：

Akahane, Kouichi ^{[1
]}

Yamamoto, Naokatsu ^{[1
]}

Gozu, Shin-ichiro ^{[1
]}

Ueta, Akio ^{[1
]}

Ohtani, Naoki ^{[2
]}

Tsuchiya, Masahiro ^{[1
]}

机构：

[1] Natl Inst Informat & Commun Technol, NICT, 4-2-1 Nukui Kitamachi, Koganei, Tokyo 1848795, Japan

[2] Doshisha Univ 1 3, Tatara Miyakodani, Kyoto 6100321, Japan

来源：

2006 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS CONFERENCE PROCEEDINGS | 2006年

关键词：

D O I：

10.1109/ICIPRM.2006.1634146

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review our successful growth of stacks of InAs quantum dots (QDs) on InP(311)B substrates using a novel strain-control technique and improved the size uniformity of the QDs by precisely controlling the composition of the strain-compensating spacer layers. In a stack of 150 InAs QD layers, the density of the QDs exceeds 5 x 10(12)/cm(2) which cannot be obtained using conventional techniques for fabricating QDs. In a sample of a 150-layer stack, the QDs show good size uniformity and an ordered structure. In addition, a strong 1.5 mu m photoluminescence emission was observed from this sample at room temperature.

引用

页码：192 / +

页数：2

共 22 条

[1] Role of A1 in spacer layer on the formation of stacked InAs quantum dot structures on InP(311)B [J].

Akahane, K ;

Yamamoto, N ;

Ohtani, N ;

Okada, Y ;

Kawabe, M .

JOURNAL OF CRYSTAL GROWTH, 2003, 256 (1-2) :7-11

[2] Fabrication of ultra-high density InAs-stacked quantum dots by strain-controlled growth on InP(311)B substrate [J].

Akahane, K ;

Ohtani, N ;

Okada, Y ;

Kawabe, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 245 (1-2) :31-36

[3] Formation of lateral-two-dimensional ordering in self-assembled InGaAs quantum dot on high index substrates [J].

Akahane, K ;

Xu, HZ ;

Okada, Y ;

Kawabe, M .

PHYSICA E, 2001, 11 (2-3) :94-98

[4] Nonlinear processes responsible for nondegenerate four-wave mixing in quantum-dot optical amplifiers [J].

Akiyama, T ;

Wada, O ;

Kuwatsuka, H ;

Simoyama, T ;

Nakata, Y ;

Mukai, K ;

Sugawara, M ;

Ishikawa, H .

APPLIED PHYSICS LETTERS, 2000, 77 (12) :1753-1755

[5] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[6] Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001) [J].

Brault, J ;

Gendry, M ;

Marty, O ;

Pitaval, M ;

Olivares, J ;

Grenet, G ;

Hollinger, G .

APPLIED SURFACE SCIENCE, 2000, 162 :584-589

[7] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

GOLDSTEIN, L ;

GLAS, F ;

MARZIN, JY ;

CHARASSE, MN ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1099-1101

[8] Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy [J].

Kaizu, T ;

Yamaguchi, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B) :1885-1887

[9]

Kim KM, 2003, JPN J APPL PHYS 1, V42, P54, DOI 10.1143/JJAP.42.541

[10] LOW-THRESHOLD, LARGE T-O INJECTION-LASER EMISSION FROM (INGA)AS QUANTUM DOTS [J].

KIRSTAEDTER, N ;

LEDENTSOV, NN ;

GRUNDMANN, M ;

BIMBERG, D ;

USTINOV, VM ;

RUVIMOV, SS ;

MAXIMOV, MV ;

KOPEV, PS ;

ALFEROV, ZI ;

RICHTER, U ;

WERNER, P ;

GOSELE, U ;

HEYDENREICH, J .

ELECTRONICS LETTERS, 1994, 30 (17) :1416-1417

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