Effects of proton irradiation on luminescence emission and carrier dynamics of self-assembled III-V quantum dots

被引：28
作者：
Leon, R
Marcinkevicius, S
Siegert, J
Cechavicius, B
Magness, B
Taylor, W
Lobo, C
机构：
[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA
[2] Royal Inst Technol, Dept Microelect & Informat Technol, Electrum 229, S-16440 Kista, Sweden
[3] Lithuania Acad Sci, Inst Semicond Phys, LT-2600 Vilnius, Lithuania
[4] Calif State Univ Los Angeles, Dept Phys & Astron, Los Angeles, CA 90032 USA
[5] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 06期
关键词：
carrier dynamics; compound semiconductors; displacement damage; photoluminescence; Stranski-Krastanow quantum dots;
D O I：
10.1109/TNS.2002.806018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of proton irradiation (1.5 MeV) on photoluminescence intensities and carrier dynamics were compared between III-V quantum dots and similar quantum well structures. A significant enhancement in radiation tolerance is seen with three-dimensional (3-D) quantum confinement.. Measurements were carried out in different quantum dot (QD) structures, varying in material (InGaAs/GaAs and InAlAS/AlGaAS), QD surface density (4 x 10(8) to 3 x 10(10) cm(-2)), and substrate orientation [(100) and (311) B]. Similar trends were observed for all QD samples. A slight increase in PL emission after low to intermediate proton doses, are also observed in InGaAs/GaAs (100) QD structures. The latter is explained in terms of more efficient carrier transfer from the wetting layer via radiation-induced defects.
引用
收藏
页码：2844 / 2851
页数：8
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