Magnetic-Field Induced Strains in Ferromagnetic Shape Memory Alloy Ni55Mn23Ga22 Deposited by RF-Magnetron Sputtering

被引：3

作者：

Bernard, Florent ^{[1
]}

Rousselot, Christophe ^{[1
]}

Delobelle, Patrick ^{[2
]}

Hirsinger, Laurent ^{[2
]}

Burdet, Pierre ^{[3
]}

机构：

[1] UTBM, ENSMM, CNRS, UFC,Inst FEMTO ST,Dept MN2S, F-25211 Montbeliard, France

[2] UTBM, ENSMM, CNRS, UFC,Inst FEMTO ST,Dept MN2S, F-25000 Besancon, France

[3] CIME EPFL, CH-1015 Lausanne, Switzerland

来源：

PLASMA PROCESSES AND POLYMERS | 2009年 / 6卷

关键词：

annealing; microelectromechanical systems (MEMS); Ni2MnGa; physical vapor deposition (PVD); thin films; NI2MNGA; CRYSTALLIZATION; BEHAVIOR;

D O I：

10.1002/ppap.200932104

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

1.5 mu m-Ni55Mn23Ga22 ferromagnetic thin films were deposited onto silicon substrates and silicon single beam cantilever using radio-frequency magnetron sputtering. As-deposited sample and heat-treated thin films were studied on their silicon substrates and peeled off to determine the influence of the stress. Post-heat treatment process allows at the films to achieve the shape memory effect (SME). Vibrating sample magnetometer (VSM) and deflection measurement of the sample annealed at 873 K during 36 ks exhibit ferromagnetic martensitic structure with a typical SME response to the magnetic field induced strains which match the values of the bulk material.

引用

页码：S822 / S825

页数：4

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