Fully Integrated 39 dBm, 3-Stage Doherty PA MMIC in a Low-Voltage GaAs HBT Technology

被引：16

作者：

Karthaus, Udo ^{[1
]}

Sukumaran, Deepti ^{[1
]}

Tontisirin, Sitt ^{[1
]}

Ahles, Stephan ^{[1
]}

Elmaghraby, Ahmed ^{[1
]}

Schmidt, Lothar ^{[1
]}

Wagner, Horst ^{[1
]}

机构：

[1] Ubidyne GmbH, D-89081 Ulm, Germany

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2012年 / 22卷 / 02期

关键词：

Active antenna system (AAS); Doherty power amplifier; GaAs; hetero-junction bipolar transistor (HBT); long term evolution (LTE); power amplifier (PA); HANDSET APPLICATIONS; POWER-AMPLIFIERS;

D O I：

10.1109/LMWC.2011.2181829

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A power amplifier, designed and fabricated in a low voltage GaAs hetero-junction bipolar transistor technology with a Doherty output stage, is presented. A pre-driver, a driver, main and peaking amplifiers, bias circuits, a 90 degrees power splitter, and the Doherty impedance transformer are integrated on a single chip. Measured key performance parameters include a P1dB compression point of at least 38.8 dBm over the US digital dividend band ranging from 728 to 768 MHz, and a PAE of 37% for a 5 MHz long term evolution downlink signal with 7.16 dB peak-to-average ratio.

引用

页码：94 / 96

页数：3

共 8 条

[1] The Doherty power amplifier with collector current and voltage controls for handset applications [J].