Preparation of La-doped Yb-123 thin films for high-Tc devices

被引：28

作者：

Adachi, S ^{[1
]}

Wakana, H ^{[1
]}

Horibe, M ^{[1
]}

Inoue, N ^{[1
]}

Sugano, T ^{[1
]}

Tanabe, K ^{[1
]}

机构：

[1] ISTEC, Superconduct Res Lab, Koto Ku, Tokyo 1350062, Japan

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2002年 / 378卷

关键词：

Yb-123; superconductor; thin film; surface morphology; substitution;

D O I：

10.1016/S0921-4534(02)01693-3

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated superconducting La-doped Yb-123 thin films on LSAT substrates by a pulsed laser deposition technique. Simultaneous partial substitution of La for Yb and Ba is effective to prepare impurity-free Yb-123 thin films with a very smooth surface. Pure 123-type thin films with c-axis orientation were successfully prepared at substrate temperatures of 650-700 degreesC. These films exhibited T-c(zero)'s of 74-79 K. The present La-doped Yb-123 film is useful for fabrication of high-T-c devices, particularly the upper layers of multilayer structures. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1213 / 1215

页数：3

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