Effective Negative Diffusion of Singlet Excitons in Organic Semiconductors

被引:27
作者
Berghuis, Anton Matthijs [1 ,2 ]
Raziman, T., V [1 ,2 ]
Halpin, Alexei [1 ,2 ]
Wang, Shaojun [1 ,2 ,3 ]
Curto, Alberto G. [1 ,2 ]
Rivas, Jaime Gomez [1 ,2 ,4 ]
机构
[1] Eindhoven Univ Technol, Inst Photon Integrat, Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Dept Appl Phys, Eindhoven, Netherlands
[3] Soochow Univ, Sch Optoelect Sci & Engn, MOE Key Lab Modern Opt Technol, Suzhou 215006, Peoples R China
[4] Eindhoven Univ Technol, Inst Complex Mol Syst ICMS, Eindhoven, Netherlands
关键词
Annihilation - Excited states - Single crystals - Excitons - Diffusion;
D O I
10.1021/acs.jpclett.0c03171
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using diffraction-limited ultrafast imaging techniques, we investigate the propagation of singlet and triplet excitons in single-crystal tetracene. Instead of an expected broadening, the distribution of singlet excitons narrows on a nanosecond time scale after photoexcitation. This narrowing results in an effective negative diffusion in which singlet excitons migrate toward the high-density region, eventually leading to a singlet exciton distribution that is smaller than the laser excitation spot. Modeling the excited-state dynamics demonstrates that the origin of the anomalous diffusion is rooted in nonlinear triplet-triplet annihilation (TTA). We anticipate that this is a general phenomenon that can be used to study exciton diffusion and nonlinear TTA rates in semiconductors relevant for organic optoelectronics.
引用
收藏
页码:1360 / 1366
页数:7
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