The effect of annealing temperature on flexural strength, dielectric loss and thermal conductivity of Si3N4 ceramics

被引：19

作者：

Chen, Huanbei ^{[1
]}

Wang, Weide ^{[2
,3
]}

Yu, Xing ^{[4
]}

Zuo, Kai-hui ^{[2
]}

Xia, Yongfeng ^{[2
]}

Yin, Jinwei ^{[2
]}

Liang, Hanqin ^{[2
]}

Yao, Dongxu ^{[2
]}

Zeng, Yu-Ping ^{[2
]}

机构：

[1] Nanjing Elect Devices Inst, Nanjing 210016, Jiangsu, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

[4] Shanghai Radio Equipment Res Inst, Shanghai 200090, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2020年 / 813卷

基金：

国家重点研发计划;

关键词：

Si3N4; ceramics; Annealing; Dielectric; Thermal conductivity; SILICON-NITRIDE CERAMICS; MECHANICAL-PROPERTIES; PHASES; MGO;

D O I：

10.1016/j.jallcom.2019.152203

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effect of annealing temperatures on flexural strength, dielectric and thermal properties of Si3N4 ceramics was investigated with different amounts of Yb2O3 (3.5 mol% and 7 mol%) as sintering additives. High density of >99% were achieved after hot pressing. The post annealing heat treatment promoted the crystallization of the grain boundary glass phase. Low dielectric loss of <4 x 10(-4) were obtained for all samples, a low dielectric loss of 1.8 x 10(-4) was achieved by annealing at 1500 degrees C for 24 h with 7 mol% Yb2O3 as sintering additives. A mild anisotropic microstructure was obtained due to merit of hot pressing method. High thermal conductivity of >75 W/(m.K) and >90 W/(m.K) were obtained in the direction parallel and perpendicular to the hot-pressing direction in all samples, respectively. The low flexural strength of similar to 600 MPa may attribute to the large grain in the matrix and lack of elongated abnormal grains. (C) 2019 Elsevier B.V. All rights reserved.

引用

页数：6

共 28 条

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