A 5 GHz low noise amplifier with on-chip transformer-balun

被引：0
|
作者：
El-Gharniti, Ouail [1 ]
Kerherve, Eric [1 ]
Begueret, Jean-Baptiste [1 ]
机构：
[1] Univ Bordeaux, CNRS, UMR 5818, ENSEIRB,Microelect IXL Lab, Bordeaux, France
来源：
2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2006年
关键词：
broadband matching; differential amplifier; low noise amplifier (LNA); on-chip transformer; ultra wideband (UWB);
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the design and implementation of a 56 GHz differential low noise amplifier (LNA) for WLAN applications. The LNA is fabricated in 0.25 mu m SiGe BiCMOS process from STMicroelectronics. By using on-chip transformers a broadband impedance matching (3.5-11 GHz), conversion between single-end and differential signals and smaller chip size are achieved. The LNA exhibits a small signal gain of 14.25 dB and a noise figure of 4.1 dB. It draws 13.3 mA from 1.8 V power supply and exhibits and CP1 of -9 dBm. The chip size including pads is 0.68mm(2).
引用
收藏
页码：963 / +
页数：3
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