A 5 GHz low noise amplifier with on-chip transformer-balun

被引：0

作者：

El-Gharniti, Ouail ^{[1
]}

Kerherve, Eric ^{[1
]}

Begueret, Jean-Baptiste ^{[1
]}

机构：

[1] Univ Bordeaux, CNRS, UMR 5818, ENSEIRB,Microelect IXL Lab, Bordeaux, France

来源：

2006 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-4 | 2006年

关键词：

broadband matching; differential amplifier; low noise amplifier (LNA); on-chip transformer; ultra wideband (UWB);

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design and implementation of a 56 GHz differential low noise amplifier (LNA) for WLAN applications. The LNA is fabricated in 0.25 mu m SiGe BiCMOS process from STMicroelectronics. By using on-chip transformers a broadband impedance matching (3.5-11 GHz), conversion between single-end and differential signals and smaller chip size are achieved. The LNA exhibits a small signal gain of 14.25 dB and a noise figure of 4.1 dB. It draws 13.3 mA from 1.8 V power supply and exhibits and CP1 of -9 dBm. The chip size including pads is 0.68mm(2).

引用

页码：963 / +

页数：3

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