Amorphous selenium and its alloys from early xeroradiography to high resolution X-ray image detectors and ultrasensitive imaging tubes

被引:154
作者
Kasap, Safa [1 ]
Frey, Joel B. [1 ]
Belev, George [1 ]
Tousignant, Olivier [2 ]
Mani, Habib [2 ]
Laperriere, Luc [2 ]
Reznik, Alla [3 ,4 ]
Rowlands, John A. [5 ]
机构
[1] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK S7N 5A9, Canada
[2] Anrad Corp, St Laurent, PQ H4R 2P1, Canada
[3] Thunder Bay Reg Res Inst, Thunder Bay, ON P7B 6V4, Canada
[4] Lakehead Univ, Dept Phys, Thunder Bay, ON P7B 5E1, Canada
[5] Univ Toronto, Sunnybrook Hlth Sci Ctr, Toronto, ON M4N 3M5, Canada
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2009年 / 246卷 / 08期
基金
加拿大自然科学与工程研究理事会;
关键词
CHARGE-LIMITED CURRENTS; ACTIVE-MATRIX READOUT; FLAT-PANEL DETECTOR; IMPACT IONIZATION; ULTRAHIGH-SENSITIVITY; RADIOLOGY; TRANSIENT; FEASIBILITY; MOBILITIES; GENERATION;
D O I
10.1002/pssb.200982007
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We describe the progress in the science and technology of stabilized a-Se from its early use in xerography and xeroradiography to its present use in commercial modem flat panel X-ray imagers and ultrasensitive video tubes which utilize impact ionization of drifting holes. Both electrons and holes can drift in stabilized a-Se, which is a distinct advantage since X-ray photogeneration of charge carriers occurs throughout the bulk of the photoconductive layer. An a-Se photoconductor has to be operated at high fields to ensure that the photogeneration efficiency is sufficiently large to provide reasonable X-ray sensitivity. However, at high fields, the dark current is unacceptably large in simple metal/a-Se/metal devices, and special multilayer device structures need to be designed. The dark current decays with time and increases with the nominal applied field. The reduction of the dark current to a tolerable level was one of the key factors that lead to the commercialization of a-Se X-ray detectors. We discuss the origin of the dark current, and highlight some of the current challenges in the design of next generation detectors. We also discuss the origin of impact ionization in a-Se, and its fruitful utilization in ultrasensitive imaging devices, including the Harpicon, which are likely to lead to new high detective quantum efficiency detectors. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1794 / 1805
页数:12
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