Raman scattering study of Ga1-xMnxN crystals

被引：96

作者：

Gebicki, W

Strzeszewski, J

Kamler, G

Szyszko, T

Podsiadlo, S

机构：

[1] Warsaw Univ Technol, Fac Phys, PL-00661 Warsaw, Poland

[2] Warsaw Univ Technol, Fac Chem, PL-00664 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 26期

关键词：

D O I：

10.1063/1.126804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Raman spectra of Ga1-xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm(-1), as well as a broad structure near 600 cm(-1), not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple model of GaN lattice dynamics has been presented, and the observed bands have been assigned to disorder-activated phonon modes, in good agreement with the calculated phonon density of states. (C) 2000 American Institute of Physics. [S0003-6951(00)00326-0].

引用

页码：3870 / 3872

页数：3

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