Growth of spinel zinc thioindionate thin film by single-source MOCVD

被引：7

作者：

Nomura, R ^{[1
]}

Matsuda, H

Miyai, T

Baba, A

机构：

[1] Osaka Inst Technol, Dept Chem, Osaka 535, Japan

[2] Osaka Univ, Fac Engn, Dept Appl Chem, Suita, Osaka 565, Japan

来源：

THIN SOLID FILMS | 1999年 / 342卷 / 1-2期

关键词：

chemical vapor deposition; indium; zinc; sulfide;

D O I：

10.1016/S0040-6090(98)01445-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Binuclear complex Et2In(S2CNEt2). ZnEt(S2CNEt2) was prepared by the reaction of indium triethyl (InEt3) with zinc bis(diethyldithiocarbamate) (Zn(S2CNEt2)(2)). This complex was an excellent single-source precursor for low pressure MOCVD growth of spinel ZnIn2S4 thin layers. Optimal growth conditions for strongly [111] oriented spinel ZnIn2S4 thin film were as follows: substrate temperature T-sub, 400 degrees C; source temperature T-SO, 60 degrees C; carrier gas N-2; carrier flow rate R-flow (total pressure 1.3 kPa), 0.31/min. The spinel ZnIn2S4 thin film grown on an Si(111) substrate showed an n-type conduction nature and excellent semiconductor properties, such as optical bandgap energy (E-g)(opt), 2.72 eV, mobility mu, 25.4 cm(2)/Vs, and carrier concentration N, 3.7 x 10(16) cm(-3). (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：108 / 112

页数：5

共 21 条

[1] PHOTOCONDUCTIVITY AND LUMINESCENCE SPECTRA OF ZNIN2S4 CRYSTALS IRRADIATED BY GAMMA-QUANTA [J].