Explanation of threshold voltage scaling in enhancement-mode InAlN/AlN-GaN metal oxide semiconductor high electron mobility transistors on Si substrates

被引：16

作者：

Alexewicz, A. ^{[1
]}

Ostermaier, C. ^{[1
]}

Henkel, C. ^{[1
]}

Bethge, O. ^{[1
]}

Carlin, J. -F. ^{[2
]}

Lugani, L. ^{[2
]}

Grandjean, N. ^{[2
]}

Bertagnolli, E. ^{[1
]}

Pogany, D. ^{[1
]}

Strasser, G. ^{[1
]}

机构：

[1] Vienna Univ Technol, A-1040 Vienna, Austria

[2] Ecole Polytech Fed Lausanne, CH-1015 Lausanne, Switzerland

来源：

THIN SOLID FILMS | 2012年 / 520卷 / 19期

关键词：

Enhancement-mode (E-mode); Normally-off; Gate oxide; High electron mobility transistor (HEMT); InAlN/GaN heterostructure; ALGAN/GAN HEMTS; OPERATION; HFETS; LAYER; WELL;

D O I：

10.1016/j.tsf.2012.05.073

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present enhancement-mode GaN high electron mobility transistors on Si substrates with ZrO2 gate dielectrics of thicknesses t(ox) between 10 and 24 nm. The oxide interlayers between the InAlN/AlN barrier and gate metal allow raising the device threshold voltage up to + 2.3 V and reduce gate leakage current to less than 100 nA/mm with a high drain current on/off ratio of 4 orders of magnitude. We use a model that explains the observed linear dependence of the threshold voltage on tox and allows determining fixed charges at the oxide/barrier interface. (C) 2012 Elsevier B. V. All rights reserved.

引用

收藏

页码：6230 / 6232

页数：3

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