Hole traps in n-GaN detected by minority carrier transient spectroscopy

被引：15

作者：

Tokuda, Yutaka ^{[1
]}

Yamada, Yujiro ^{[1
]}

Shibata, Tatsunari ^{[1
]}

Yamaguchi, Shintaro ^{[1
]}

Ueda, Hiroyuki ^{[2
]}

Uesugi, Tsutomu ^{[2
]}

Kachi, Tetsu ^{[2
]}

机构：

[1] Aichi Inst Technol, Dept Elect & Elect Engn, Toyota 4700392, Japan

[2] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

n-GaN; hole trap; minority carrier transient spectroscopy; deep level transient spectroscopy; VAPOR-PHASE EPITAXY; DEEP LEVELS; CARBON;

D O I：

10.1002/pssc.201000879

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Minority carrier transient spectroscopy (MCTS) has been applied for the detection of hole traps in n-GaN using Schottky diodes. MCTS using 355 nm light emitting diodes is performed under isothermal conditions in the temperature range 280 to 330 K for n-GaN grown by metalorganic chemical vapor deposition on sapphire. Isothermal MCTS spectra reveal the E-v + 0.86 eV hole trap with the trap concentration of 1.1x10(16) cm(-3). The E-v + 0.86 eV hole trap has the higher concentration as compared to electron traps observed by deep level transient spectroscopy. Thus, the isothermal MCTS around room temperature provides a convenient way to evaluate the dominant trap in n-GaN. It is suggested that the E-v + 0.86 eV hole trap is associated with the V-Ga-related defect or carbon-related defect. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2239 / 2241

页数：3

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