Multi-State Data Storage of Ge2Sb2Te5/Ga30Sb70 Multilayer Films for Phase Change Memory

被引：8
作者：
Sun, Mingcheng [1 ]
Shen, Bo [1 ]
Wang, Changzhou [1 ]
Song, Sannian [2 ]
Song, Zhitang [2 ]
Zhai, Jiwei [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
[2] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Micro Syst & Informat Technol, Shanghai 200050, Peoples R China
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2012年 / 15卷 / 04期
关键词：
NONVOLATILE; CRYSTALLIZATION; FUTURE;
D O I：
10.1149/2.028204esl
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The Ge2Sb2Te5/Ga30Sb70 multilayer films with different periods and thickness ratios were prepared by radio-frequency magnetron sputtering system. It was found that three stages with distinct different resistance were achieved during the process of heating for the multilayer films in less than 3 periods. The data retention temperatures for 10 years of [Ge2Sb2Te5/Ga30Sb70](2) multilayer films were estimated to be higher than 110 degrees C. The results of cross-sectional transmission electron microscopy confirmed the multilayer structure with clear interfaces between Ge2Sb2Te5 and Ga30Sb70 layers. Phase change memory device based on [Ge2Sb2Te5 (30 nm)/Ga30Sb70 (20 nm)](2) verified the multi-state data storage capability of the multilayer films. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.028204esl] All rights reserved.
引用
收藏
页码：H115 / H117
页数：3
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