Gate-Tunable Negative Differential Resistance in Next-Generation Ge Nanodevices and their Performance Metrics

In the quest to push the contemporary scientific boundaries in nanoelectronics, Ge is considered a key building block extending device performances, delivering enhanced functionalities. In this work, a quasi-1D monocrystalline and monolithic Al-Ge-Al nanowire heterostructure are embedded into a novel field-effect transistor architecture capable of combining Ge based electronics with an electrostatically tunable negative differential resistance (NDR) distinctly observable at room temperature. In this regard, a detailed study of the key metrics of NDR in Ge is presented. Most notably, a highly efficient and low-footprint platform is demonstrated, paving the way for potential applications such as fast switching multi-valued logic devices, static memory cells, or high-frequency oscillators, all implemented in one fully complementary metal-oxide-semiconductor compatible Al-Ge based device platform.