Low threshold current density operation of strain-compensated quantum cascade laser

被引：3
|
作者：
Shao Ye [1 ]
Li Lu [1 ]
Liu Jun-Qi [1 ]
Liu Feng-Qi [1 ]
Wang Zhan-Guo [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2007年 / 24卷 / 03期
关键词：
D O I：
10.1088/0256-307X/24/3/035
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the low threshold current density operation of strain-compensated In0.64Ga0.36As/In0.38Al0.62As quantum cascade lasers emitting near 4.94 mu m. By employing an enlarged strain-compensated structure and optimizing the injector doping density, a rather low threshold current density of 0.57 kA/cm(2) at 80K is achieved for an uncoated 20-mu m-wide and 2.5-mm-long laser.
引用
收藏
页码：717 / 720
页数：4
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