Mechanism of Na-doped p-type ZnO films: Suppressing Na interstitials by codoping with H and Na of appropriate concentrations

被引：42

作者：

Lin, S. S. ^{[1
]}

He, H. P. ^{[1
]}

Lu, Y. F. ^{[1
]}

Ye, Z. Z. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 09期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; ACCEPTOR; LITHIUM; DONOR; EMISSION;

D O I：

10.1063/1.3254221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogen is codoped with sodium into ZnO films. X-ray photoelectron spectroscopy and secondary ion mass spectroscope indicate that the Na concentration decreases as the substrate temperature increases. Hall-effect tests reveal a transition from n-type to p-type conduction when the growth temperature increases, which is explained by the suppression of Na interstitials by codoping with H and Na of appropriate concentrations. An insulating intended Na-H codoped sample shows reduced resistivity and p-type conductivity after annealing at 550 degrees C, which may be due to dissociation of Na-Zn-H complexes. The realization of p-type ZnO by Na-H codoping may explain the discrepancies in behavior of Na in ZnO and suggests the potential of Na-H codoping method [E.-C. Lee and K. J. Chang. Phys. Rev. B 70, 115210 (2004)]. (D 2009 American Institute of Physics. [doi: 10.1063/1.3254221]

引用

页数：5

共 29 条

[1] Amphoteric phosphorus doping for stable p-type ZnO [J].

Allenic, Arnold ;

Guo, Wei ;

Chen, Yanbin ;

Katz, Michael Brandon ;

Zhao, Guangyuan ;

Che, Yong ;

Hu, Zhendong ;

Liu, Bing ;

Zhang, Sheng Bai ;

Pan, Xiaoqing .

ADVANCED MATERIALS, 2007, 19 (20) :3333-+

[2] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[3] Sb-doped p-ZnO/Ga-doped n-ZnO homojunction ultraviolet light emitting diodes [J].

Chu, S. ;

Lim, J. H. ;

Mandalapu, L. J. ;

Yang, Z. ;

Li, L. ;

Liu, J. L. .

APPLIED PHYSICS LETTERS, 2008, 92 (15)

[4] EXCHANGE BROADENED, OPTICALLY DETECTED ESR-SPECTRA FOR LUMINESCENT DONOR-ACCEPTOR PAIRS IN LI DOPED ZNO [J].

COX, RT ;

BLOCK, D ;

HERVE, A ;

PICARD, R ;

SANTIER, C ;

HELBIG, R .

SOLID STATE COMMUNICATIONS, 1978, 25 (02) :77-80

[5] Hydrogen: A relevant shallow donor in zinc oxide [J].

Hofmann, DM ;

Hofstaetter, A ;

Leiter, F ;

Zhou, HJ ;

Henecker, F ;

Meyer, BK ;

Orlinskii, SB ;

Schmidt, J ;

Baranov, PG .

PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4

[6] Hydrogen incorporation and diffusivity in plasma-exposed bulk ZnO [J].

Ip, K ;

Overberg, ME ;

Heo, YW ;

Norton, DP ;

Pearton, SJ ;

Stutz, CE ;

Luo, B ;

Ren, F ;

Look, DC ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (03) :385-387

[7] REACTIONS OF LITHIUM AS A DONOR AND AN ACCEPTOR IN ZNO [J].

LANDER, JJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 15 (3-4) :324-334

[8] Possible p-type doping with group-I elements in ZnO -: art. no. 115210 [J].

Lee, EC ;

Chang, KJ .

PHYSICAL REVIEW B, 2004, 70 (11) :115210-1

[9] p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes [J].

Lin, S. S. ;

Lu, J. G. ;

Ye, Z. Z. ;

He, H. P. ;

Gu, X. Q. ;

Chen, L. X. ;

Huang, J. Y. ;

Zhao, B. H. .

SOLID STATE COMMUNICATIONS, 2008, 148 (1-2) :25-28

[10] Na doping concentration tuned conductivity of ZnO films via pulsed laser deposition and electroluminescence from ZnO homojunction on silicon substrate [J].

Lin, S. S. ;

Ye, Z. Z. ;

Lu, J. G. ;

He, H. P. ;

Chen, L. X. ;

Gu, X. Q. ;

Huang, J. Y. ;

Zhu, L. P. ;

Zhao, B. H. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (15)

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