Radiation hardened by design RF circuits implemented in 0.13 μm CMOS technology

被引：22

作者：

Chen, W. ^{[1
]}

Pouget, V.

Gentry, G. K.

Barnaby, H. J.

Vermeire, B.

Bakkaloglu, B.

Kiaei, S.

Holbert, K. E.

Fouillat, P.

机构：

[1] Arizona State Univ, Tempe, AZ 85287 USA

[2] Univ Bordeaux 1, IXL Lab, Talence, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2006年 / 53卷 / 06期

关键词：

annular gate transistor; low noise amplifier (LNA); radiation hardened by design (RHBD); single-event transients; total ionizing dose; voltage-controlled oscillators (VCO);

D O I：

10.1109/TNS.2006.885009

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two important RF building blocks, a low noise amplifier and a voltage-controlled oscillator, were designed and fabricated in A 0.13 mu m CMOS process using radiation-hardened by design techniques. Both circuits exhibit only minimal degradation with total dose when the parts are irradiated up to 500 krad (SiO2) Laser beam testing results indicate that the output spectrum of the two circuits has no noticeable change with laser energy up to 200 pJ.

引用

收藏

页码：3449 / 3454

页数：6

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