InGaAs/InP DHBT technology and design methodology for over 40 Gb/s optical communication circuits

被引：18
作者：
André, P
Blayac, S
Berdaguer, P
Benchimol, JL
Godin, J
Kauffmann, N
Konczykowska, A
Kasbari, AE
Riet, M
机构：
[1] France Telecom R&D, OPTO, Gropement Interet Econ, F-91461 Marcoussis, France
[2] EMR Photoelect, Princeton, NJ 08550 USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2001年 / 36卷 / 09期
关键词：
bipolar circuit; heterojunction bipolar transistor; indium phosphide; integrated circuits layout extraction; optical communications;
D O I：
10.1109/4.944658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-performance technologies and adequate design methodologies are required to address the needs of very high-speed ICs (VHSICs) for over 40 Gb/s optical communications. We describe improvements we have introduced in our InP DHBT technology, and how our design methodology has evolved. We show how it results in improved circuit designs, and present some recent results, with some considerations on measurement limitations.
引用
收藏
页码：1321 / 1327
页数：7
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