Nucleation and growth of Au-assisted GaAs nanowires on GaAs(111)B and Si(111) in comparison

被引：10

作者：

Breuer, Steffen ^{[1
]}

Hilse, Maria ^{[1
]}

Geelhaar, Lutz ^{[1
]}

Riechert, Henning ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 323卷 / 01期

关键词：

Nanostructures; Nucleation; Substrates Molecular beam epitaxy; Nanomaterials; Semiconducting III-V materials; MOLECULAR-BEAM; VLS GROWTH; MECHANISM; EPITAXY;

D O I：

10.1016/j.jcrysgro.2010.11.071

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The nucleation and growth of GaAs nanowires fabricated by molecular beam epitaxy (MBE) following the Au-assisted vapor-liquid-solid mechanism were compared on GaAs(1 1 1)B and on Si(1 1 1) substrates. On both substrates, reflection high-energy electron diffraction (RHEED) patterns and scanning electron microscopy (SEM) images of several samples belonging to a growth time series were analyzed. During the nucleation stage, growth on Si(1 1 1) is dominated by horizontally growing traces and coalescing islands, while growth on GaAs( 1 1 1)B proceeds instantly in the vertical direction. After this nucleation stage. the Si substrate is covered by a closed, rough GaAs layer, and nanowires of similar shape grow on both substrates with similar axial and radial growth rates. However, the diameter of the nanowires on Si(1 1 1) is different than that on GaAs(1 1 1)B, because the size of the Au droplets, which result from the annealing of a thin Au layer, is different on the two types of substrates. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：311 / 314

页数：4

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