Mid-infrared PbTe vertical external cavity surface emitting laser on Si-substrate with above 1 W output power

被引：26

作者：

Rahim, M. ^{[1
]}

Fill, M. ^{[1
]}

Felder, F. ^{[1
]}

Chappuis, D. ^{[1
]}

Corda, M. ^{[1
]}

Zogg, H. ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Thin Film Phys Grp, CH-8005 Zurich, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 24期

基金：

瑞士国家科学基金会;

关键词：

lead alloys; optical pumping; silicon; surface emitting lasers; 5; MU-M; SEMICONDUCTOR-LASERS; VECSEL;

D O I：

10.1063/1.3275792

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mid-infrared vertical external cavity surface emitting lasers (VECSELs) emitting above 1 W output power in pulsed mode and up to 17 mW in continuous mode at -172 degrees C were realized. Emission wavelength changes from 5 mu m at -172 degrees C to 3.6 mu m at 20 degrees C heat sink temperature. The active medium is a one wavelength thick PbTe layer grown by molecular beam epitaxy on a Si-substrate. It is followed by a 2.5 pair Pb(1-y)Eu(y)Te/EuTe epitaxial Bragg mirror. The cavity is completed with an external curved Pb(1-y)Eu(y)Te/BaF(2) mirror. The VECSEL is optically pumped with 1.55 mu m wavelength laser and In-soldered to Cu heat sink. No microstructural processing is needed.

引用

页数：3

共 10 条

[1] Continuous wave operation of a mid-infrared semiconductor laser at room temperature [J].

Beck, M ;

Hofstetter, D ;

Aellen, T ;

Faist, J ;

Oesterle, U ;

Ilegems, M ;

Gini, E ;

Melchior, H .

SCIENCE, 2002, 295 (5553) :301-305

[2] Lifetimes and Auger coefficients in type-II W interband cascade lasers [J].

Bewley, W. W. ;

Lindle, J. R. ;

Kim, C. S. ;

Kim, M. ;

Canedy, C. L. ;

Vurgaftman, I. ;

Meyer, J. R. .

APPLIED PHYSICS LETTERS, 2008, 93 (04)

[3]

KHOKHLOV D, 2003, LEAD CHALCOGENIDES O, V18, P36805

[4] High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM00 beams [J].

Kuznetsov, M ;

Hakimi, F ;

Sprague, R ;

Mooradian, A .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (08) :1063-1065

[5] Midinfrared lead-chalcogenide vertical external cavity surface emitting laser with 5 μm wavelength [J].

Rahim, M. ;

Arnold, M. ;

Felder, F. ;

Behfar, K. ;

Zogg, H. .

APPLIED PHYSICS LETTERS, 2007, 91 (15)

[6] Optically pumped 5 μm IV-VI VECSEL with Al-heat spreader [J].

Rahim, M. ;

Felder, E. ;

Fill, M. ;

Zogg, H. .

OPTICS LETTERS, 2008, 33 (24) :3010-3012

[7] 4.5 μm wavelength vertical external cavity surface emitting laser operating above room temperature [J].

Rahim, M. ;

Khiar, A. ;

Felder, F. ;

Fill, M. ;

Zogg, H. .

APPLIED PHYSICS LETTERS, 2009, 94 (20)

[8] Lead chalcogenide VECSEL on Si emitting at 5 μm [J].

Rahim, M. ;

Felder, F. ;

Fill, M. ;

Boye, D. ;

Zogg, H. .

ELECTRONICS LETTERS, 2008, 44 (25) :1467-+

[9] High-brightness long-wavelength semiconductor disk lasers [J].

Schulz, Nicola ;

Hopkins, John-Mark ;

Rattunde, Marcel ;

Burns, David ;

Wagner, Joachim .

LASER & PHOTONICS REVIEWS, 2008, 2 (03) :160-181

[10] Vertical-external-cavity semiconductor lasers [J].

Tropper, AC ;

Foreman, HD ;

Garnache, A ;

Wilcox, KG ;

Hoogland, SH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2004, 37 (09) :R75-R85

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