Large enhancement of thermoelectric performance of InTe compound by sintering and CuInTe2 doping

被引：11

作者：

Huang, Richang ^{[1
,2
]}

Huang, Yi ^{[1
,2
]}

Zhu, Bin ^{[1
,2
]}

He, Mingkai ^{[1
,2
]}

Ge, Zhen-Hua ^{[1
,2
]}

Fu, Liangwei ^{[1
,2
,3
]}

He, Jiaqing ^{[1
,2
]}

机构：

[1] Southern Univ Sci & Technol, Shenzhen Key Lab Thermoelect Mat, Shenzhen 518055, Peoples R China

[2] Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China

[3] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2019年 / 126卷 / 12期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

D O I：

10.1063/1.5117500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InTe is a newly emerging thermoelectric material working at a middle temperature range with an ultralow thermal conductivity. Nevertheless, the figure of merit (ZT) of InTe currently is way too inappreciable compared with other material systems. In this work, we present that a peak ZT as high as similar to 0.8 is achieved at 723 K in InTe composited with 1.02% of CuInTe2 prepared by spark plasma sintering. The large improvement of thermoelectric performance in sintered InTe mainly comes from the enhancement of conductivity. The reasons for this phenomenon are investigated as well. We find that extra In vacancies which lead to an increment of hole concentration and the energy barrier at grain boundaries are responsible for the behavior of electrical properties. Besides, a small amount of CuInTe2 also contributes to the improvement of power factor, which leads to higher ZT.

引用

页数：6

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