Impurity Doping in Silicon Nanowires

被引：89

作者：

Fukata, Naoki ^{[1
,2
]}

机构：

[1] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitecton, Tsukuba, Ibaraki 3050044, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

ADVANCED MATERIALS | 2009年 / 21卷 / 27期

基金：

日本科学技术振兴机构;

关键词：

ELECTRON SPIN RESONANCE; LASER-ABLATION; DOPED SILICON; HYDROGEN PASSIVATION; CRYSTALLINE SILICON;

D O I：

10.1002/adma.200900376

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Silicon nanowires (SiNWs) have considerable potential to assist the realization of next-generation metal-oxide semiconductor field-effect transistors (MOSFETs) with vertical structures. Impurity doping and its control is a key technique in the creation of SiNW devices, which renders it necessary to develop characterization methods for dopant atoms in SiNWs. In this Research News, we described how the states of the dopant atoms boron and I phosphorus can be detected.

引用

收藏

页码：2829 / 2832

页数：4

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