Effect of precursor to the physical properties of co-electrodeposited Cu2ZnSnS4 thin films

被引:0
作者
Han, Liying [1 ]
Wang, Yang [1 ]
Zhao, Hongdong [1 ]
Zhou, Yatong [1 ]
机构
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Tianjin Key Lab Elect Mat & Devices, 5340 Xiping Rd, Tianjin 300401, Peoples R China
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2017年 / 19卷 / 11-12期
关键词
CZTS; Thin film; Co-electrodeposition; Precursor; SOLAR-CELL; GROWTH; DEPOSITION; ABSORBERS;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The Cu2ZnSnS4 (CZTS) thin films is a new type of materials with a band gap of 1.4-1.6 eV, just as the same as the best band gap for solar cells (1.5eV). The co-electrodeposition is a one-step method for the preparation of Cu2ZnSnS4 thin films on ITO substrate. Through the simple and effective co-electrodeposition method, the structural, morphological, compositional and optical properties of Cu2ZnSnS4 thin films can be regulated through adjusting the Cu, Zn, Sn and S component in the precursor solution. Structure and morphological characteristics of the Cu2ZnSnS4 thin films were studied by XRD diffraction analysis, Raman analysis, EDS and SEM analysis respectively. The photoelectric response analysis also were performed to comprehensive evaluate the quality of the thin films.
引用
收藏
页码:793 / 799
页数:7
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