Electric, dielectric and magnetic properties of Ga, Er and Zn ion doped Fe2O3 thin films

被引：4

作者：

Apostolova, I. N. ^{[1
]}

Apostolov, A. T. ^{[2
]}

Wesselinowa, J. M. ^{[3
]}

机构：

[1] Univ Forestry, Sofia 1756, Bulgaria

[2] Univ Architecture Civil Engn & Geodesy, Sofia 1046, Bulgaria

[3] Univ Sofia, Sofia 1164, Bulgaria

来源：

PHYSICS LETTERS A | 2021年 / 393卷

关键词：

Ion doped Fe2O3 thin films; Polarization; Dielectric constant; Magnetization; Microscopic model; ROOM-TEMPERATURE; ALPHA-FE2O3; NANOPARTICLES; SCATTERING; PURE;

D O I：

10.1016/j.physleta.2021.127167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using a microscopic model we have investigated the electric, dielectric and magnetic properties of Ga, Er and Zn doped alpha-Fe2O3 thin films. The polarization Pin Ga doped alpha-Fe2O3 decreases with increasing Ga content x, and increases with enhancing magnetic field hand decreasing film thickness N. In Ga doped hematite the dielectric constant epsilon shows a peak at T-C. epsilon decreases with increasing h, indicating a strong magneto-dielectric effect. The contributions of the spin-phonon and phonon-phonon interactions below and above T-C are considered. The dielectric constant in Ga, Er and Zn ion doped Fe2O3 can increase or decrease for different ions and different ion doping concentration. The ion doping dependence of the magnetization is also calculated. (C) 2021 Elsevier B.V. All rights reserved.

引用

页数：5

共 28 条

[21] Characterizations of diverse mole of pure and Ni-doped α-Fe2O3 synthesized nanoparticles through chemical precipitation route [J].