Electric, dielectric and magnetic properties of Ga, Er and Zn ion doped Fe2O3 thin films

Using a microscopic model we have investigated the electric, dielectric and magnetic properties of Ga, Er and Zn doped alpha-Fe2O3 thin films. The polarization Pin Ga doped alpha-Fe2O3 decreases with increasing Ga content x, and increases with enhancing magnetic field hand decreasing film thickness N. In Ga doped hematite the dielectric constant epsilon shows a peak at T-C. epsilon decreases with increasing h, indicating a strong magneto-dielectric effect. The contributions of the spin-phonon and phonon-phonon interactions below and above T-C are considered. The dielectric constant in Ga, Er and Zn ion doped Fe2O3 can increase or decrease for different ions and different ion doping concentration. The ion doping dependence of the magnetization is also calculated. (C) 2021 Elsevier B.V. All rights reserved.