Temperature-controlled synthesis of Ga2O3 nanobelts and nanosheets

被引：4

作者：

Kim, H. W. ^{[1
]}

机构：

[1] Inha Univ, Sch Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2007年 / 86卷 / 03期

关键词：

D O I：

10.1007/s00339-006-3796-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the effect of growth temperature on structural morphology and photoluminescence (PL) properties of as-synthesized gallium oxide (Ga2O3) nanostructures. The products consisted of Ga2O3 nanobelts and nanosheets (i.e. wider nanobelts), which had monoclinic crystalline structures. The average width of structures grown at 1000 degrees C was relatively greater than those at 800 degrees C, revealing that higher temperature favored the formation of nanosheets. PL measurements of 800 degrees C- and 1000 degrees C-grown samples indicated that both samples exhibited a broad emission band peaked around the blue-light region, while only the 800 degrees C- grown sample showed a red peak.

引用

页码：315 / 319

页数：5

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