Acousto-electron Effects in the InAs/GaAs Heterostructure with InAs Quantum Dots

被引：0
作者：
Peleshchak, Roman [1 ]
Kuzyk, Oleh [1 ]
Dan'kiv, Olesya [1 ]
机构：
[1] Drohobych Ivan Franko State Pedag Univ, Drogobych, Ukraine
来源：
PROCEEDINGS OF THE 2019 IEEE 9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS: APPLICATIONS & PROPERTIES (NAP-2019), PTS 1-2 | 2019年
关键词：
quantum dot; acoustic wave; deformation; energy of electron and hole; modulation of the energy; PERIODIC STRUCTURES;
D O I：
10.1109/NAP47236.2019.216993
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the framework of an electron-deformation model, the influence of deformation on the energy spectrum of electron and hole in the InAs/GaAs heterostructure with InAs quantum dots (QDs) is investigated. The influence of acousto-electron effects on the modulation of radiation energy at the recombination transition between the ground states of electron and hole in the InAs/GaAs heterostructure with InAs quantum dots is researched. The character of the dependence of the amplitude of the modulation of the energy of recombination radiation on the QDs size and the amplitude of the mechanical stress created by the acoustic wave on the matrix surface is established.
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页数：5
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