Dual-gate induced InP nanowire diode

被引：1
作者：
Storm, Kristian [1 ]
Nylund, Gustav [1 ]
Borgstrom, Magnus [1 ]
Wallentin, Jesper [1 ]
Fasth, Carina [1 ]
Thelander, Claes [1 ]
Samuelson, Lars [1 ]
机构：
[1] Lund Univ, Nanometer Struct Consortium, S-22100 Lund, Sweden
来源：
PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷
关键词：
nanowire; InP; wrap-gate; Fermi level tuning; GROWTH; ARRAYS;
D O I：
10.1063/1.3666362
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.
引用
收藏
页数：2
相关论文
共 50 条
  • [31] InP nanowire photodetectors heteroepitaxially grown between silicon electrodes
    Sarkar, Ataur
    Chaudhry, Anurag
    Logeeswaran, V. J.
    Yi, Sungsoo
    Islam, M. Saif
    NANOPHOTONICS FOR COMMUNICATION: MATERIALS, DEVICES, AND SYSTEMS IV, 2007, 6779
  • [32] InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure
    Katsumi, Yu
    Gamo, Hironori
    Motohisa, Junichi
    Tomioka, Katsuhiro
    ACS APPLIED MATERIALS & INTERFACES, 2024, 16 (23) : 30471 - 30477
  • [33] Synthesis and optical properties of InP quantum dot/nanowire heterostructures
    Ren, Pinyun
    Xu, Jinyou
    Wang, Yicheng
    Zhuang, Xiujuan
    Zhang, Qinglin
    Zhou, Hong
    Wan, Qiang
    Shan, Zhengping
    Zhu, Xiaoli
    Pan, Anlian
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (09): : 1898 - 1902
  • [34] Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots
    Romeo, Lorenzo
    Roddaro, Stefano
    Pitanti, Alessandro
    Ercolani, Daniele
    Sorba, Lucia
    Beltram, Fabio
    NANO LETTERS, 2012, 12 (09) : 4490 - 4494
  • [35] Wurtzite InP nanowire arrays grown by selective area MOCVD
    Chu, Hyung-Joon
    Yeh, Ting-Wei
    Stewart, Lawrence
    Dapkus, P. Daniel
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2494 - 2497
  • [36] A 500 x 500 Dual-Gate SPAD Imager With 100% Temporal Aperture and 1 ns Minimum Gate Length for FLIM and Phasor Imaging Applications
    Wayne, Michael
    Ulku, Arin
    Ardelean, Andrei
    Mos, Paul
    Bruschini, Claudio
    Charbon, Edoardo
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2022, 69 (06) : 2865 - 2872
  • [37] Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements
    Otnes, Gaute
    Barrigon, Enrique
    Sundvall, Christian
    Svensson, K. Erik
    Heurlin, Magnus
    Siefer, Gerald
    Samuelson, Lars
    Aberg, Ingvar
    Borgstrom, Magnus T.
    NANO LETTERS, 2018, 18 (05) : 3038 - 3046
  • [38] Absorption of light in InP nanowire arrays
    Nicklas Anttu
    Alireza Abrand
    Damir Asoli
    Magnus Heurlin
    Ingvar Åberg
    Lars Samuelson
    Magnus Borgström
    Nano Research, 2014, 7 : 816 - 823
  • [39] Carrier Mobility Variation Induced by the Substrate Bias in Ω-gate SOI Nanowire MOSFETs
    Bergamaschi, F. E.
    Ribeiro, T. A.
    Paz, B. C.
    de Souza, M.
    Barraud, S.
    Casse, M.
    Vinet, M.
    Faynot, O.
    Pavanello, M. A.
    2019 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2019,
  • [40] Mechanism behind the switching of current induced by a gate field in a semiconducting nanowire junction
    Mandal, Subhasish
    Pati, Ranjit
    PHYSICAL REVIEW B, 2011, 84 (11)
12345