Dual-gate induced InP nanowire diode

被引：1

作者：

Storm, Kristian ^{[1
]}

Nylund, Gustav ^{[1
]}

Borgstrom, Magnus ^{[1
]}

Wallentin, Jesper ^{[1
]}

Fasth, Carina ^{[1
]}

Thelander, Claes ^{[1
]}

Samuelson, Lars ^{[1
]}

机构：

[1] Lund Univ, Nanometer Struct Consortium, S-22100 Lund, Sweden

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

nanowire; InP; wrap-gate; Fermi level tuning; GROWTH; ARRAYS;

D O I：

10.1063/1.3666362

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Semiconductor devices are heavily dependent on dopant incorporation in order to control the electrical properties. In this paper we investigate the possibility of using gates wrapped around a nanowire (NW) channel as a way of tuning the Fermi level position, in certain cases removing the need for dopants and providing a more dynamical way of setting the device properties. InP NW devices with omega gates are fabricated, and a p-n junction is formed in a nominally intrinsic NW channel. In order to further increase the electrostatic control of the channel and other device properties, vertical devices are discussed as a promising way of implementing this type of device.

引用

页数：2

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