Monolayer graphene growth on Ni(111) by low temperature chemical vapor deposition

In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 degrees C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at similar to 550 degrees C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below similar to 500 degrees C a competing surface carbide phase impedes graphene formation. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3675481]